Toward high-mobility organic field-effect transistors: Control of molecular packing and large-area fabrication of single-crystal-based devices

被引：59

作者：

Li, Hanying ^{[1
,2
]}

Giri, Gaurav ^{[3
]}

Tok, Jeffrey B. -H. ^{[3
]}

Bao, Zhenan ^{[3
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Dept Polymer Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

[3] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

来源：

MRS BULLETIN | 2013年 / 38卷 / 01期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

THIN-FILM TRANSISTORS; PHYSICAL VAPOR GROWTH; CHARGE-TRANSPORT; FUNCTIONALIZED ACENES; ELECTRONIC-PROPERTIES; SELECTIVE NUCLEATION; PENTACENE; PERFORMANCE; SEMICONDUCTORS; MONOLAYER;

D O I：

10.1557/mrs.2012.309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-mobility organic field-effect transistors (OFETs) are the basic units for a variety of high-performance electronic applications. Here, we review recent progress in controlling molecular packing and crystal growth in high-mobility, small molecular organic FETs. Strategies to tune molecular packing of organic semiconductors and their impact on charge transport are described. Methods for the controlled growth of single-crystal organic semiconductors required for large-area device construction are reviewed. Furthermore, the advantages, limitations, and potential of these methods are also discussed.

引用

页码：34 / 42

页数：9

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