Mobility anisotropy in InSb/AlxIn1-xSb single quantum wells

被引：15

作者：

Ball, MA ^{[1
]}

Keay, JC

Chung, SJ

Santos, MB

Johnson, MB

机构：

[1] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA

[2] Univ Oklahoma, Ctr Semicond Phys Nanostruct, Norman, OK 73019 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.1463206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Three types of defects at the surface of InSb quantum well samples are identified: hillocks, square mounds, and oriented abrupt steps. The electron mobility in the quantum well correlates to the density of abrupt features, such that samples with a high density of anisotropic defects show anisotropy in the mobility. We propose that the dominant scattering mechanism associated with these abrupt features is a fluctuation in the quantum well morphology. (C) 2002 American Institute of Physics.

引用

页码：2138 / 2140

页数：3

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