SURFACE RECONSTRUCTIONS OF INSB(100) OBSERVED BY SCANNING-TUNNELING-MICROSCOPY

被引:69
作者
MCCONVILLE, CF
JONES, TS
LEIBSLE, FM
DRIVER, SM
NOAKES, TCQ
SCHWEITZER, MO
RICHARDSON, NV
机构
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT CHEM,LONDON SW7 2AY,ENGLAND
[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2AY,ENGLAND
[3] UNIV LIVERPOOL,SURFACE SCI RES CTR,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 20期
关键词
D O I
10.1103/PhysRevB.50.14965
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A number of surface reconstructions formed on InSb(100) have been observed with atomic resolution using scanning tunneling microscopy (STM). Cycles of low-energy ion bombardment and annealing result in the formation of an In-rich surface with a c(8×2) diffraction pattern. Filled-states images of this indicate a (4×1) periodicity arising from imaging occupied lone-pair orbitals on exposed second-layer Sb atoms. The controlled deposition of Sb4 from a Knudsen effusion source onto the c(8×2) surface at elevated temperatures led to the formation of a (1×1), c(4×4), and an asymmetric (1×3) structure, in order of decreasing Sb/In ratio. Filled- and empty-states STM images of all these Sb-rich reconstructions were generated and the coexistence of the different structures was also observed. Both the (1×1) and asymmetric (1×3) surfaces showed a high degree of disorder while the c(4×4) surface was highly ordered. The c(4×4) structure, which involves the chemisorption of Sb onto an already Sb-terminated surface, is characterized by blocks of three pairs of well-resolved Sb dimers. Structural models are proposed for the ordered structures observed. © 1994 The American Physical Society.
引用
收藏
页码:14965 / 14976
页数:12
相关论文
共 32 条
  • [1] AMBIENT-TEMPERATURE DIODES AND FIELD-EFFECT TRANSISTORS IN INSB/IN1-XALXSB
    ASHLEY, T
    DEAN, AB
    ELLIOTT, CT
    MCCONVILLE, CF
    PRYCE, GJ
    WHITEHOUSE, CR
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (14) : 1761 - 1763
  • [2] AN AES EVALUATION OF CLEANING AND ETCHING METHODS FOR INSB
    AURET, FD
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2752 - 2755
  • [3] AVERY AR, IN PRESS SURF SCI
  • [4] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY
    BIEGELSEN, DK
    BRINGANS, RD
    NORTHRUP, JE
    SWARTZ, LE
    [J]. PHYSICAL REVIEW B, 1990, 41 (09): : 5701 - 5706
  • [5] ATOM-RESOLVED IMAGING AND SPECTROSCOPY ON THE GAAS(001) SURFACE USING TUNNELING MICROSCOPY
    BRESSLERHILL, V
    WASSERMEIER, M
    POND, K
    MABOUDIAN, R
    BRIGGS, GAD
    PETROFF, PM
    WEINBERG, WH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1881 - 1885
  • [6] A GENERALIZED-MODEL FOR THE RECONSTRUCTION OF (001) SURFACES OF III-V COMPOUND SEMICONDUCTORS BASED ON A RHEED STUDY OF INSB(001)
    DEOLIVEIRA, AG
    PARKER, SD
    DROOPAD, R
    JOYCE, BA
    [J]. SURFACE SCIENCE, 1990, 227 (1-2) : 150 - 156
  • [7] ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE
    FEENSTRA, RM
    STROSCIO, JA
    TERSOFF, J
    FEIN, AP
    [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (12) : 1192 - 1195
  • [8] PHOTOEMISSION AND SCANNING-TUNNELING-MICROSCOPY STUDY OF GASB(100)
    FRANKLIN, GE
    RICH, DH
    SAMSAVAR, A
    HIRSCHORN, ES
    LEIBSLE, FM
    MILLER, T
    CHIANG, TC
    [J]. PHYSICAL REVIEW B, 1990, 41 (18): : 12619 - 12627
  • [9] ON THE ATOMIC-STRUCTURE AND ELECTRONIC-PROPERTIES OF DECAPPED GAAS(001)(2 X 4) SURFACES
    GALLAGHER, MC
    PRINCE, RH
    WILLIS, RF
    [J]. SURFACE SCIENCE, 1992, 275 (1-2) : 31 - 40
  • [10] INSB(100) RECONSTRUCTIONS PROBED WITH CORE-LEVEL PHOTOEMISSION
    JOHN, P
    MILLER, T
    CHIANG, TC
    [J]. PHYSICAL REVIEW B, 1989, 39 (03): : 1730 - 1737