Preparation of CaCu3Ti4O12 thin films by chemical solution deposition

被引:22
作者
Lu, W [1 ]
Feng, LX [1 ]
Cao, GH [1 ]
Jiao, ZK [1 ]
机构
[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1023/B:JMSC.0000026967.67886.ce
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The preparation of CaCu3Ti4O12 (CCTO) thin films on LaAlO3 (001) substrates was analyzed by chemical solution deposition. Investigations show that the CCTO thin films had the same unusual properties as bulk and single crystals. The thermal decomposition behavior of the precursor solution was found by thermal analysis to determine the appropriate temperature of pyrolysis. The results show the epitaxial growth of film along the c-axis of LaAlO3 single crystal substrates with the help of X-ray diffraction and atomic force microscopy measurements.
引用
收藏
页码:3523 / 3524
页数:2
相关论文
共 9 条
[1]   Charge transfer in the high dielectric constant materials CaCu3Ti4O12 and CdCu3Ti4O12 -: art. no. 092106 [J].
Homes, CC ;
Vogt, T ;
Shapiro, SM ;
Wakimoto, S ;
Subramanian, MA ;
Ramirez, AP .
PHYSICAL REVIEW B, 2003, 67 (09)
[2]   Optical response of high-dielectric-constant perovskite-related oxide [J].
Homes, CC ;
Vogt, T ;
Shapiro, SM ;
Wakimoto, S ;
Ramirez, AP .
SCIENCE, 2001, 293 (5530) :673-676
[3]   Epitaxial growth of dielectric CaCu3Ti4O12 thin films on (001) LaAlO3 by pulsed laser deposition [J].
Lin, Y ;
Chen, YB ;
Garret, T ;
Liu, SW ;
Chen, CL ;
Chen, L ;
Bontchev, RP ;
Jacobson, A ;
Jiang, JC ;
Meletis, EI ;
Horwitz, J ;
Wu, HD .
APPLIED PHYSICS LETTERS, 2002, 81 (04) :631-633
[4]   Origin of apparent colossal dielectric constants [J].
Lunkenheimer, P ;
Bobnar, V ;
Pronin, AV ;
Ritus, AI ;
Volkov, AA ;
Loidl, A .
PHYSICAL REVIEW B, 2002, 66 (05) :521051-521054
[5]   Giant dielectric constant response in a copper-titanate [J].
Ramirez, AP ;
Subramanian, MA ;
Gardel, M ;
Blumberg, G ;
Li, D ;
Vogt, T ;
Shapiro, SM .
SOLID STATE COMMUNICATIONS, 2000, 115 (05) :217-220
[6]   Epitaxial thin films of the giant-dielectric-constant material CaCu3Ti4O12 grown by pulsed-laser deposition [J].
Si, W ;
Cruz, EM ;
Johnson, PD ;
Barnes, PW ;
Woodward, P ;
Ramirez, AP .
APPLIED PHYSICS LETTERS, 2002, 81 (11) :2056-2058
[7]   CaCu3Ti4O12:: One-step internal barrier layer capacitor [J].
Sinclair, DC ;
Adams, TB ;
Morrison, FD ;
West, AR .
APPLIED PHYSICS LETTERS, 2002, 80 (12) :2153-2155
[8]   High dielectric constant in ACu3Ti4O12 and ACu3Ti3FeO12 phases [J].
Subramanian, MA ;
Li, D ;
Duan, N ;
Reisner, BA ;
Sleight, AW .
JOURNAL OF SOLID STATE CHEMISTRY, 2000, 151 (02) :323-325
[9]   High dielectric constant in CaCu3Ti4O12 bulk and thin films [J].
Zhao, YL ;
Jiao, ZK ;
Gao, GH .
ACTA PHYSICA SINICA, 2003, 52 (06) :1500-1504