Improved performance of quantum cascade lasers through a scalable, manufacturable epitaxial-side-down mounting process

被引：61

作者：

Tsekoun, A

Go, R

Pushkarsky, M

Razeghi, M

Patel, CKN

机构：

[1] Pranalytica Inc, Santa Monica, CA 90401 USA

[2] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60208 USA

[3] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA

来源：

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA | 2006年 / 103卷 / 13期

关键词：

continuous wave operation; room temperature operation; high-power lasers; mid-IR semiconductor lasers;

D O I：

10.1073/pnas.0600859103

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report substantially improved performance of high-power quantum cascade lasers (QCLs) by using epitaxial-side-down mounting that provides superior heat dissipation properties. We used aluminum nitride as the heatsink material and gold-tin eutectic solder. We have obtained continuous wave power output of 450 mW at 20 degrees C from mid-IR QCLs. The improved thermal management achieved with epitaxial-side-down mounting combined with a highly manufacturable and scalable assembly process should permit incorporation of mid-IR QCLs in reliable instrumentation.

引用

收藏

页码：4831 / 4835

页数：5

相关论文

共 11 条

[1] Continuous wave operation of a mid-infrared semiconductor laser at room temperature [J].

Beck, M ;

Hofstetter, D ;

Aellen, T ;

Faist, J ;

Oesterle, U ;

Ilegems, M ;

Gini, E ;

Melchior, H .

SCIENCE, 2002, 295 (5553) :301-305

[2] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[3] Continuous-wave operation of λ∼4.8 μm quantum-cascade lasers at room temperature [J].

Evans, A ;

Yu, JS ;

Slivken, S ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 2004, 85 (12) :2166-2168

[4] High-temperature, high-power, continuous-wave operation of buried heterostructure quantum-cascade lasers [J].

Evans, A ;

Yu, JS ;

David, J ;

Doris, L ;

Mi, K ;

Slivken, S ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 2004, 84 (03) :314-316

[5] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

[6] Improved CW operation of quantum cascade lasers with epitaxial-side heat-sinking [J].

Gmachl, C ;

Sergent, AM ;

Tredicucci, A ;

Capasso, F ;

Hutchinson, AL ;

Sivco, DL ;

Baillargeon, JN ;

Chu, SNG ;

Cho, AY .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (11) :1369-1371

[7] Continuous wave operation of a 9.3 μm quantum cascade laser on a Peltier cooler [J].

Hofstetter, D ;

Beck, M ;

Aellen, T ;

Faist, J ;

Oesterle, U ;

Ilegems, M ;

Gini, E ;

Melchior, H .

APPLIED PHYSICS LETTERS, 2001, 78 (14) :1964-1966

[8]

KAZARINOV RF, 1971, SOV PHYS SEMICOND+, V5, P707

[9] Comparison between epi-down and epi-up bonded high-power single-mode 980-nm semiconductor lasers [J].

Liu, XS ;

Hu, MH ;

Nguyen, HK ;

Caneau, CG ;

Rasmussen, MH ;

Davis, RW ;

Zah, CE .

IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2004, 27 (04) :640-646

[10] SOME ASPECTS OF BONDING-SOLDER DETERIORATION OBSERVED IN LONG-LIVED SEMICONDUCTOR-LASERS - SOLDER MIGRATION AND WHISKER GROWTH [J].

MIZUISHI, K .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :289-295