Graphene segregated on Ni surfaces and transferred to insulators

被引：1076

作者：

Yu, Qingkai ^{[1
]}

Lian, Jie ^{[2
]}

Siriponglert, Sujitra ^{[1
]}

Li, Hao ^{[3
]}

Chen, Yong P. ^{[4
,5
]}

Pei, Shin-Shem ^{[1
]}

机构：

[1] Univ Houston, Dept Elect & Comp Engn, Ctr Adv Mat, Houston, TX 77204 USA

[2] Rensselaer Polytech Inst, Dept Mech & Aerosp Engn, Troy, NY 12180 USA

[3] Univ Missouri, Dept Mech & Aerosp Engn, Columbia, MO 65211 USA

[4] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[5] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2982585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling down with various rates. Different cooling rates led to different segregation behaviors, strongly affecting the thickness and quality of the graphene films. Electron microscopy and Raman spectroscopy indicated that the graphene films synthesized with medium cooling rates have high quality crystalline structure and well-controlled thicknesses. The graphene films were transferred to insulating substrates by wet etching and found to maintain their high quality. (C) 2008 American Institute of Physics.

引用

页数：3

共 17 条

[1] INFLUENCE OF SULFUR ON SURFACE CARBON MONOLAYER FORMATION AND GRAPHITE GROWTH ON NICKEL [J].

ANGERMANN, HH ;

HORZ, G .

APPLIED SURFACE SCIENCE, 1993, 70-1 :163-168

[2] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[3]

EIZENBERG M, 1979, SURF SCI, V82, P228, DOI 10.1016/0039-6028(79)90330-3

[4] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[5] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[6] A chemical route to graphene for device applications [J].

Gilje, Scott ;

Han, Song ;

Wang, Minsheng ;

Wang, Kang L. ;

Kaner, Richard B. .

NANO LETTERS, 2007, 7 (11) :3394-3398

[7] Electronic transport properties of individual chemically reduced graphene oxide sheets [J].

Gomez-Navarro, Cristina ;

Weitz, R. Thomas ;

Bittner, Alexander M. ;

Scolari, Matteo ;

Mews, Alf ;

Burghard, Marko ;

Kern, Klaus .

NANO LETTERS, 2007, 7 (11) :3499-3503

[8] Raman scattering from high-frequency phonons in supported n-graphene layer films [J].

Gupta, A. ;

Chen, G. ;

Joshi, P. ;

Tadigadapa, S. ;

Eklund, P. C. .

NANO LETTERS, 2006, 6 (12) :2667-2673

[9]

HAYES A, 1939, METALL PET ENG, V135, P85

[10] SEGREGATION ISOSTERES FOR CARBON AT (100) SURFACE OF NICKEL [J].

ISETT, LC ;

BLAKELY, JM .

SURFACE SCIENCE, 1976, 58 (02) :397-414

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