Optical characterization of ZnMnO-based dilute magnetic semiconductor structures

被引:12
作者
Buyanova, IA [1 ]
Chen, WM
Ivill, MP
Pate, R
Norton, DP
Pearton, SJ
Dong, JW
Osinsky, A
Hertog, B
Dabiran, AM
Chow, PP
机构
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] SVT Associates Inc, Eden Prairie, MN 55344 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 01期
基金
美国国家科学基金会;
关键词
D O I
10.1116/1.2163884
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
n-type ZnMnO spin injection layers were grown by pulsed laser deposition on top of n-ZnMgO/ZnO/p-AlGaN/p-GaN hybrid spin light-emitting diode (LED) structures synthesized by molecular-beam epitaxy. Both the ZnMnO/ZnMgO/ZnO/AlGaN/GaN structures and control ZnMnO samples show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. This indicates difficulties in generating spin polarization by optical spin orientation or possible efficient spin losses. The results are similar to those found earlier for GaMnN/InGaN/AlGaN spin-LED structures and indicate that these wide-band-gap dilute magnetic semiconductors with weak spin-orbit interaction and hexagonal symmetry are not attractive for spin-LED applications. (c) 2006 American Vacuum Society.
引用
收藏
页码:259 / 262
页数:4
相关论文
共 20 条
[1]   Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers [J].
Buyanova, IA ;
Bergman, JP ;
Chen, WM ;
Thaler, G ;
Frazier, R ;
Abernathy, CR ;
Pearton, SJ ;
Kim, J ;
Ren, F ;
Kyrychenko, FV ;
Stanton, CJ ;
Pan, CC ;
Chen, GT ;
Chyi, J ;
Zavada, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06) :2668-2672
[2]   Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes [J].
Buyanova, IA ;
Izadifard, M ;
Storasta, L ;
Chen, WM ;
Kim, J ;
Ren, F ;
Thaler, G ;
Abernathy, CR ;
Pearton, SJ ;
Pan, CC ;
Chen, GT ;
Chyi, JI ;
Zavada, JM .
JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (05) :467-471
[3]   On the origin of spin loss in GaMnN/InGaN light-emitting diodes [J].
Buyanova, IA ;
Izadifard, M ;
Chen, WM ;
Kim, J ;
Ren, F ;
Thaler, G ;
Abernathy, CR ;
Pearton, SJ ;
Pan, CC ;
Chen, GT ;
Chyi, JI ;
Zavada, JM .
APPLIED PHYSICS LETTERS, 2004, 84 (14) :2599-2601
[4]   Control of spin functionality in ZnMnSe-based structures: Spin switching versus spin alignment [J].
Buyanova, IA ;
Rudko, GY ;
Chen, WM ;
Toropov, AA ;
Sorokin, SV ;
Ivanov, SV ;
Kop'ev, PS .
APPLIED PHYSICS LETTERS, 2003, 82 (11) :1700-1702
[5]   Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures [J].
Buyanova, IA ;
Ivanov, IG ;
Monemar, B ;
Chen, WM ;
Toropov, AA ;
Terent'ev, YV ;
Sorokin, SV ;
Lebedev, AV ;
Ivanov, SV ;
Kop'ev, PS .
APPLIED PHYSICS LETTERS, 2002, 81 (12) :2196-2198
[6]   High-temperature ferromagnetism in dilute magnetic oxides [J].
Coey, JMD .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
[7]   Donor impurity band exchange in dilute ferromagnetic oxides [J].
Coey, JMD ;
Venkatesan, M ;
Fitzgerald, CB .
NATURE MATERIALS, 2005, 4 (02) :173-179
[8]   Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications [J].
Dong, JW ;
Osinsky, A ;
Hertog, B ;
Dabiran, AM ;
Chow, PP ;
Heo, YW ;
Norton, DP ;
Pearton, SJ .
JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (04) :416-423
[9]   Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics [J].
Fukumura, T ;
Yamada, Y ;
Toyosaki, H ;
Hasegawa, T ;
Koinuma, H ;
Kawasaki, M .
APPLIED SURFACE SCIENCE, 2004, 223 (1-3) :62-67
[10]   Magnetization dependence on electron density in epitaxial ZnO thin films codoped with Mn and Sn [J].
Ivill, M ;
Pearton, SJ ;
Norton, DP ;
Kelly, J ;
Hebard, AF .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (05)