On the origin of spin loss in GaMnN/InGaN light-emitting diodes

被引：33

作者：

Buyanova, IA ^{[1
]}

Izadifard, M

Chen, WM

Kim, J

Ren, F

Thaler, G

Abernathy, CR

Pearton, SJ

Pan, CC

Chen, GT

Chyi, JI

Zavada, JM

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

[5] USA, Res Off, Res Triangle Pk, NC 27709 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期

关键词：

D O I：

10.1063/1.1695100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. (C) 2004 American Institute of Physics.

引用

页码：2599 / 2601

页数：3

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