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Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications

被引：61
作者：
Dong, JW [1 ]
Osinsky, A
Hertog, B
Dabiran, AM
Chow, PP
Heo, YW
Norton, DP
Pearton, SJ
机构：
[1] SVT Associates Inc, Eden Prairie, MN 55344 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2005年 / 34卷 / 04期
关键词：
MgZnO; ZnO; light emitting diodes; UV emitters;
D O I：
10.1007/s11664-005-0121-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the fabrication and characterization of an ultraviolet (UV) light-emitting diode (LED) based on a p-n junction MgZnO/ZnO/AlGaN/GaN semiconductor triple-heterostructure (THS). Radio-frequency (RF) plasma-assisted molecular-beam epitaxy (MBE) has been employed to grow individual epitaxial layers of ZnO, MgxZn1-xO, and the complete heterostructure on c-plane GaN/sapphire templates. Various growth strategies have been used to optimize the quality of the ZnO layers as well as to precisely control the composition of the MgxZn1-xO compound. Cross-sectional transmission electron microscopy (TEM) study shows the excellent crystalline quality of the pseudomorphically grown ZnO active region of the device. A strong electroluminescence (EL) emission associated with ZnO excitonic transition was observed up to 650 K. The results shown in this paper strongly suggest the viability of RF plasma-assisted MBE in the development of next-generation LTV emitters using ZnO-based materials.
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页码：416 / 423
页数：8
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