Switching field trends in pseudo spin valve nanoelement arrays

被引:15
作者
Castaño, FJ
Hao, Y
Ross, CA
Vögeli, B
Smith, HI
Haratani, S
机构
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[3] TDk Corp, Data Storage Technol Ctr, Nagano, Japan
关键词
D O I
10.1063/1.1452261
中图分类号
O59 [应用物理学];
学科分类号
摘要
Room temperature magnetic properties of arrays of NiFe 6 nm/Cu 3-6 nm Co 4 nm pseudospin valve elements with widths below 100 nm have been investigated as a function of the aspect ratio of the elements. The elements are made from sputtered film stacks patterned using interference lithography and ion milling. The separate magnetic switching of the Co and NiFe layers can be clearly distinguished. The magnetic layers interact through both exchange and magnetostatic coupling. As both the aspect ratio of the element and the Cu spacer thickness increase, the magnetostatic coupling becomes weaker and the magnetization of the layers becomes coupled parallel at remanence. (C) 2002 American Institute Physics.
引用
收藏
页码:7317 / 7319
页数:3
相关论文
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