Feature profile evolution simulation using a level set method

被引:13
作者
Hwang, HH [1 ]
Govindan, TR
Meyyappan, M
机构
[1] Thermosci Inst, Moffett Field, CA 94035 USA
[2] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA
关键词
D O I
10.1149/1.1391861
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A level set formulation is used to simulate profile evolution in etching and deposition processes. This approach, an alternative to string algorithms to track a moving front, is coupled to a model that computes etch rates based on first principles. Results are presented for silicon etching in a chlorine plasma. Etch profiles for various ratios of neutral to ion flux, ion anisotropy parameters, trench widths, and mask thickness are presented. Simulations capture the reactive ion etching lag effect and shadowing effects due to mask thickness. (C) 1999 The Electrochemical Society. S0013-4651(98)06-088-1. All rights reserved.
引用
收藏
页码:1889 / 1894
页数:6
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