High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm(2)/Vs, relatively independent of thickness (15-90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm(2)/Vs (electrons) and 480 cm(2)/Vs (holes) at thickness similar to 50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789365]