Band-gap transition induced by interlayer van der Waals interaction in MoS2

被引：354

作者：

Han, S. W. ^{[1
]}

Kwon, Hyuksang ^{[2
,3
]}

Kim, Seong Keun ^{[2
,3
]}

Ryu, Sunmin ^{[4
]}

Yun, Won Seok ^{[1
]}

Kim, D. H. ^{[5
]}

Hwang, J. H. ^{[5
]}

Kang, J. -S. ^{[5
]}

Baik, J. ^{[6
]}

Shin, H. J. ^{[6
]}

Hong, S. C. ^{[1
]}

机构：

[1] Univ Ulsan, Harvest Storage Res Ctr, Dept Phys & Energy, Ulsan 680749, South Korea

[2] Seoul Natl Univ, Dept Chem, Seoul 151747, South Korea

[3] Seoul Natl Univ, Dept Biophys & Chem Biol, Seoul 151747, South Korea

[4] Kyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea

[5] Catholic Univ Korea, Dept Phys, Puchon 420743, South Korea

[6] POSTECH, PAL, Pohang 790784, South Korea

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

ELECTRONIC-STRUCTURE; GRAPHENE; PHOTOEMISSION; GRAPHITE;

D O I：

10.1103/PhysRevB.84.045409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the electronic structures of single- and double-layered MoS2, composing of heterojunction structures such as graphene, MoS2, and SiO2 and MoS2 and SiO2, using scanning photoelectron microscopy. Negative shifts of both core levels and valence bands toward the Fermi energy have been observed. In connection with first-principles calculations, we have confirmed that the direct gap of single-layer MoS2 is changed to an indirect gap by stacking additional layers via van der Waals interlayer interactions.

引用

页数：6

共 28 条

[1] Density-functional-theory calculations of electronic band structure of single-crystal and single-layer WS2 -: art. no. 073413 [J].

Albe, K ;

Klein, A .

PHYSICAL REVIEW B, 2002, 66 (07) :1-3

[2]

[Anonymous], PHYS REV B

[3]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[4] One-dimensional metallic edge states in MoS2 -: art. no. 196803 [J].

Bollinger, MV ;

Lauritsen, JV ;

Jacobsen, KW ;

Norskov, JK ;

Helveg, S ;

Besenbacher, F .

PHYSICAL REVIEW LETTERS, 2001, 87 (19) :1-196803

[5] MANY-ELECTRON SINGULARITY IN X-RAY PHOTOEMISSION AND X-RAY LINE SPECTRA FROM METALS [J].

DONIACH, S ;

SUNJIC, M .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02) :285-&

[6] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[7] Atomic-scale structure of single-layer MoS2 nanoclusters [J].

Helveg, S ;

Lauritsen, JV ;

Lægsgaard, E ;

Stensgaard, I ;

Norskov, JK ;

Clausen, BS ;

Topsoe, H ;

Besenbacher, F .

PHYSICAL REVIEW LETTERS, 2000, 84 (05) :951-954

[8] Surface and bulk components in angle-resolved core-level photoemission spectroscopy of graphite [J].

Hunt, Michael R. C. .

PHYSICAL REVIEW B, 2008, 78 (15)

[9] Spatial chemical inhomogeneity and local electronic structure of Mn-doped Ge ferromagnetic semiconductors [J].

Kang, JS ;

Kim, G ;

Wi, SC ;

Lee, SS ;

Choi, S ;

Cho, S ;

Han, SW ;

Kim, KH ;

Song, HJ ;

Shin, HJ ;

Sekiyama, A ;

Kasai, S ;

Suga, S ;

Min, BI .

PHYSICAL REVIEW LETTERS, 2005, 94 (14)

[10] Cluster-support interactions and morphology of MoS2 nanoclusters in a graphite-supported hydrotreating model catalyst [J].

Kibsgaard, Jakob ;

Lauritsen, Jeppe V. ;

Laegsgaard, Erik ;

Clausen, Bjerne S. ;

Topsoe, Henrik ;

Besenbacher, Flemming .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (42) :13950-13958

← 1 2 3 →