Layer-Resolved Graphene Transfer via Engineered Strain Layers

被引：199

作者：

Kim, Jeehwan ^{[1
]}

Park, Hongsik ^{[1
]}

Hannon, James B. ^{[1
]}

Bedell, Stephen W. ^{[1
]}

Fogel, Keith ^{[1
]}

Sadana, Devendra K. ^{[1
]}

Dimitrakopoulos, Christos ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

SCIENCE | 2013年 / 342卷 / 6160期

关键词：

EPITAXIAL GRAPHENE; WAFER; ENERGY; FILMS;

D O I：

10.1126/science.1242988

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The performance of optimized graphene devices is ultimately determined by the quality of the graphene itself. Graphene grown on copper foils is often wrinkled, and the orientation of the graphene cannot be controlled. Graphene grown on SiC(0001) via the decomposition of the surface has a single orientation, but its thickness cannot be easily limited to one layer. We describe a method in which a graphene film of one or two monolayers grown on SiC is exfoliated via the stress induced with a Ni film and transferred to another substrate. The excess graphene is selectively removed with a second exfoliation process with a Au film, resulting in a monolayer graphene film that is continuous and single-oriented.

引用

页码：833 / 836

页数：4

共 28 条

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[Anonymous], PHYS REV B

[2] Graphene: synthesis and applications [J].