Pit formation during graphene synthesis on SiC(0001):: In situ electron microscopy

被引：146

作者：

Hannon, J. B. ^{[1
]}

Tromp, R. M. ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.77.241404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the formation of graphene on the Si face of SiC(0001)-6H and -4H using in situ electron microscopy. By imaging the nucleation and growth of the 6 root 3 "buffer layer" during annealing in vacuum we identify key factors responsible for the appearance of deep pits during graphene formation. Pits form because domains of the buffer layer pin decomposing surface steps. Graphene is observed to nucleate in the pits, where the step density is high.

引用

页数：4

共 12 条

[1] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[2] Atomic structure of the 6H-SiC(0001) nanomesh [J].

Chen, W ;

Xu, H ;

Liu, L ;

Gao, XY ;

Qi, DC ;

Peng, GW ;

Tan, SC ;

Feng, YP ;

Loh, KP ;

Wee, ATS .

SURFACE SCIENCE, 2005, 596 (1-3) :176-186

[3] Catalyst-free growth of ordered single-walled carbon nanotube networks [J].

Derycke, V ;

Martel, R ;

Radosvljevic, M ;

Ross, FMR ;

Avouris, P .

NANO LETTERS, 2002, 2 (10) :1043-1046

[4] Heteroepitaxial graphite on 6H-SiC(0001):: Interface formation through conduction-band electronic structure [J].

Forbeaux, I ;

Themlin, JM ;

Debever, JM .

PHYSICAL REVIEW B, 1998, 58 (24) :16396-16406

[5] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[6] Field effect in epitaxial graphene on a silicon carbide substrate [J].

Gu, Gong ;

Nie, Shu ;

Feenstra, R. M. ;

Devaty, R. P. ;

Choyke, W. J. ;

Chan, Winston K. ;

Kane, Michael G. .

APPLIED PHYSICS LETTERS, 2007, 90 (25)

[7] Atomic models of (√3X√3)R30° reconstruction on hexagonal 6H-SiC(0001) surface [J].

Han, Y ;

Aoyama, T ;

Ichimiya, A ;

Hisada, Y ;

Mukainakano, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (05) :1972-1975

[8] Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons [J].

Hibino, H. ;

Kageshima, H. ;

Maeda, F. ;

Nagase, M. ;

Kobayashi, Y. ;

Yamaguchi, H. .

PHYSICAL REVIEW B, 2008, 77 (07)

[9] Theory of the adatom-induced reconstruction of the SiC(0001)root 3x root 3 surface [J].

Northrup, JE ;

Neugebauer, J .

PHYSICAL REVIEW B, 1995, 52 (24) :17001-17004

[10] Role of Si clusters in the phase transformation and formation of (6x6)-ring structures on 6H-SiC(0001) as a function of temperature: An STM and XPS study [J].

Ong, WJ ;

Tok, ES .

PHYSICAL REVIEW B, 2006, 73 (04)

← 1 2 →