Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene

被引：37

作者：

Dimitrakopoulos, Christos ^{[1
]}

Grill, Alfred ^{[1
]}

McArdle, Timothy J. ^{[1
]}

Liu, Zihong ^{[1
]}

Wisnieff, Robert ^{[1
]}

Antoniadis, Dimitri A. ^{[2
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 22期

关键词：

SUSPENDED GRAPHENE; TRANSISTORS; TRANSPORT; PHASE;

D O I：

10.1063/1.3595945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that the surface morphology and electrical properties of graphene grown on SiC (0001) wafers depend strongly on miscut angle, even for nominally "on-axis" wafers. Graphene grown on pit-free surfaces with narrow terraces (miscut above 0.28 degrees) shows substantially lower Hall mobility than graphene on surfaces with miscut angles below 0.1 degrees that have wider terraces with some pits. The effect of pits on mobility is not detrimental if flat, pit-free areas with dimensions larger than the carrier mean free path remain between pits. Using these results, we optimized the growth process, achieving room-temperature mobility up to 3015 cm(2)/V s at N = 2.0 x 10(12) cm(-2). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595945]

引用

页数：3

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