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Unexpected hexagonally perforated layer morphology of PS-b-PMMA block copolymer in supported thin film
被引:66
作者:
Park, I
Park, S
Park, HW
Chang, T
[1
]
Yang, HC
Ryu, CY
机构:
[1] Rensselaer Polytech Inst, Rensselaer Nanotechnol Ctr, Troy, NY 12180 USA
[2] Pohang Univ Sci & Technol, Dept Chem, Pohang 790784, South Korea
[3] Pohang Univ Sci & Technol, Polymer Res Inst, Pohang 790784, South Korea
关键词:
D O I:
10.1021/ma0515937
中图分类号:
O63 [高分子化学(高聚物)];
学科分类号:
070305 ;
080501 ;
081704 ;
摘要:
Block copolymer ordering in thin films on a preferentially wetting flat substrate is studied using a polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer, which forms PMMA cylinders in bulk. Tapping-rnode AFM and cross-sectional TEM were employed to characterize the thin film ordered structure of the PS-b-PMMA on a flat silicon surface with native oxide that is preferentially wetted by PMMA blocks. The PS-b-PMMA in thin film develops hexagonally perforated layer (HPL), which is different from its cylindrical bulk morphology. The HPL structure of PS-b-PMMA exhibits islands and holes at the surface, which persists up to the film thickness as high as 6L(0). Surface-induced reorganization of the block copolymers on PMMA-preferring flat surface may be responsible for the formation of the layerlike nonbulk structure of HPL, which has been templated from the flat surface and propagated into a multilayered HPL films.
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页码:315 / 318
页数:4
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