Memristive Behavior in Electrohydrodynamic Atomized Layers of Poly[2-methoxy-5-(2′-ethylhexyloxy)-(p-phenylenevinylene)] for Next Generation Printed Electronics

Poly[2-methoxy-5-(2'-ethylhexyloxy)-(p-phenylenevinylene)] (MEH:PPV) based organic memristor (memory resistor) has been fabricated on the indium-tin oxide (ITO) coated poly(ethylene terepthalate) (PET) substrate by the electrohydrodynamic atomization (EHDA) technique. Thin jet containing MEH: PPV polymer was generated through a capillary under electrical stresses. The jet was broken into small droplets by adjusting the distance from nozzle to substrate and collected over the substrate under normal room conditions, consequently a high quality layer of MEH: PPV was achieved with an average thickness of 168 nm. The layer was morphologically characterized by a field emission scanning electron microscope (FESEM) analysis. X-ray photoelectron spectroscope (XPS) analysis was also carried out to confirm the chemistry of the deposited material. Electrically, ITO/MEH: PPV/Ag fabricated memristor was found to be switchable between high state and low state between +/- 4 V. The research work provides the memristive behavior in electrohydrodynamic atomized layers of MEH: PPV to be used for the next generation printed electronics application. (C) 2013 The Japan Society of Applied Physics