Cost-effective fabrication of memristive devices with ZnO thin film using printed electronics technologies

被引：46

作者：

Choi, Kyung Hyun ^{[1
]}

Mustafa, Maria ^{[1
]}

Rahman, Khalid ^{[1
]}

Jeong, Bum Ko ^{[2
]}

Doh, Yang Hui ^{[2
]}

机构：

[1] Jeju Natl Univ, Sch Mechatron Engn, Cheju 690756, South Korea

[2] Jeju Natl Univ, Sch Elect Engn, Cheju 690756, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2012年 / 106卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

MECHANISM; NM;

D O I：

10.1007/s00339-011-6670-z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A prototype memristive device has been presented in this paper, for which the top and bottom electrodes have been fabricated through a simple and cost-effective technique, i.e. electrohydrodynamic printing. For deposition of the bottom electrode pattern, a silver ink containing 60 wt% silver by content was subjected to controlled flow through a metal capillary exposed to an electric field at the ambient temperature to generate an electrohydrodynamic jet, thereby depositing uniform patterns of silver on glass substrate at a constant substrate speed. The top electrode has been deposited in a similar fashion. In between the top and bottom electrodes, a uniform layer of ZnO is fabricated using spin-coating technique. The nanoscale ZnO memristor stack has a channel length of 370 mu m and channel width of 82 mu m. A memristor thus fabricated was characterized and its current voltage curves were analyzed. The device showed a typical nonvolatile resistive switching behavior present in memristor devices thus highlighting the EHD printed patterning as a reliable method for the fabrication of memory devices.

引用

页码：165 / 170

页数：6

共 40 条

[1] Inkjet printing for materials and devices [J].