Cost-effective fabrication of memristive devices with ZnO thin film using printed electronics technologies

A prototype memristive device has been presented in this paper, for which the top and bottom electrodes have been fabricated through a simple and cost-effective technique, i.e. electrohydrodynamic printing. For deposition of the bottom electrode pattern, a silver ink containing 60 wt% silver by content was subjected to controlled flow through a metal capillary exposed to an electric field at the ambient temperature to generate an electrohydrodynamic jet, thereby depositing uniform patterns of silver on glass substrate at a constant substrate speed. The top electrode has been deposited in a similar fashion. In between the top and bottom electrodes, a uniform layer of ZnO is fabricated using spin-coating technique. The nanoscale ZnO memristor stack has a channel length of 370 mu m and channel width of 82 mu m. A memristor thus fabricated was characterized and its current voltage curves were analyzed. The device showed a typical nonvolatile resistive switching behavior present in memristor devices thus highlighting the EHD printed patterning as a reliable method for the fabrication of memory devices.