Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications

被引:145
作者
Li, Yingtao [1 ,2 ]
Long, Shibing [1 ]
Zhang, Manhong [1 ]
Liu, Qi [1 ]
Shao, Lubing [1 ]
Zhang, Sen [1 ]
Wang, Yan [1 ,2 ]
Zuo, Qingyun [1 ]
Liu, Su [2 ]
Liu, Ming [1 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China
[2] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
基金
中国国家自然科学基金;
关键词
Nonvolatile memory; resistance random access memory (RRAM); resistive switching; ZrO2;
D O I
10.1109/LED.2009.2036276
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The reliable resistive switching properties of Au/ZrO2/Ag structure fabricated with full room temperature process are demonstrated in this letter. The tested devices show low operation voltages (< 1 V), high resistance ratio (about 10(4)), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 degrees C). Moreover, the benefits of high yield and multilevel storage possibility make them promising in the next generation nonvolatile memory applications.
引用
收藏
页码:117 / 119
页数:3
相关论文
共 13 条
[1]   Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch [J].
Banno, Naoki ;
Sakamoto, Toshitsugu ;
Iguchi, Noriyuki ;
Sunamura, Hiroshi ;
Terabe, Kazuya ;
Hasegawa, Tsuyoshi ;
Aono, Masakazu .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) :3283-3287
[2]   The formation and characterization of silver clusters in zirconia [J].
Govindaraj, R ;
Kesavamoorthy, R ;
Mythili, R ;
Viswanathan, B .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) :958-963
[3]   Nonpolar nonvolatile resistive switching in Cu doped ZrO2 [J].
Guan, Weihua ;
Long, Shibing ;
Liu, Qi ;
Liu, Ming ;
Wang, Wei .
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) :434-437
[4]   On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt [J].
Guan, Weihua ;
Liu, Ming ;
Long, Shibing ;
Liu, Qi ;
Wang, Wei .
APPLIED PHYSICS LETTERS, 2008, 93 (22)
[5]  
Kund M, 2005, INT EL DEVICES MEET, P773
[6]   Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications [J].
Lee, D ;
Choi, H ;
Sim, H ;
Choi, D ;
Hwang, H ;
Lee, MJ ;
Seo, SA ;
Yoo, IK .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) :719-721
[7]   Memory effect of RF sputtered ZrO2 thin films [J].
Lin, Chih-Yang ;
Wu, Chung-Yi ;
Wu, Chen-Yu ;
Lin, Chun-Chieh ;
Tseng, Tseung-Yuen .
THIN SOLID FILMS, 2007, 516 (2-4) :444-448
[8]   Effect of top electrode material on resistive switching properties of ZrO2 film memory devices [J].
Lin, Chih-Yang ;
Wu, Chen-Yu ;
Wu, Chung-Yi ;
Lee, Tzyh-Cheang ;
Yang, Fu-Liang ;
Hu, Chenming ;
Tseng, Tseung-Yuen .
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (05) :366-368
[9]  
Schindler C., 2007, P NVMTS, P82
[10]   Bipolar and unipolar resistive switching in Cu-doped SiO2 [J].
Schindler, Christina ;
Thermadam, Sarath Chandran Puthen ;
Waser, Rainer ;
Kozicki, Michael N. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) :2762-2768