Heteroepitaxial ZnO/6H-SiC structures fabricated by chemical vapor deposition

被引：23

作者：

Ataev, B. M. ^{[1
]}

Alivov, Ya. I. ^{[2
]}

Kalinina, E. V. ^{[3
]}

Mamedov, V. V. ^{[1
]}

Onushkin, G. A. ^{[3
]}

Makhmudov, S. Sh. ^{[1
]}

Omaev, A. K. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys, Daghestan Sci Ctr, Makhachkala 367003, Russia

[2] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期

关键词：

Chemical vapor deposition processes; Oxides; Zinc compounds; Semiconducting silicon compounds; Semiconducting II-VI materials; Light emitting devices;

D O I：

10.1016/j.jcrysgro.2004.11.379

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the first results of n-ZnO/p-SiC heterostructures fabrication by chemical vapor deposition in the low-pressure system. The structural and luminescence properties of these structures are studied. (C) 2004 Elsevier B. V. All rights reserved.

引用

页码：E2471 / E2474

页数：4

共 13 条

[1] Abduev A.Kh., 1987, IAN SSSR NEORG MATER, V11, P1928
[2] ABDUEV AK, 1981, OPT SPEKTROSK+, V50, P1137
[3] Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates
Alivov, YI
Kalinina, EV
Cherenkov, AE
Look, DC
Ataev, BM
Omaev, AK
Chukichev, MV
Bagnall, DM
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (23) : 4719 - 4721
[4] Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes
Alivov, YI
Van Nostrand, JE
Look, DC
Chukichev, MV
Ataev, BM
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (14) : 2943 - 2945
[5] High-quality ZnO layers grown on 6H-SiC substrates by metalorganic chemical vapor deposition
Ashrafi, ABMA
Zhang, BP
Binh, NT
Wakatsuki, K
Segawa, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (03): : 1114 - 1117
[6] Butkhuzi T. V., 1987, T FIAN, V182, P140
[7] Georgobiani A.N., 1997, IAN SSSR NEORG MATER, V33, P185
[8] Fabrication of the low-resistive p-type ZnO by codoping method
Joseph, M
Tabata, H
Saeki, H
Ueda, K
Kawai, T
[J]. PHYSICA B-CONDENSED MATTER, 2001, 302 : 140 - 148
[9] Structural, electrical and optical properties of bulk 4H and 6H p-type SiC
Kalinina, EV
Zubrilov, AS
Kuznetsov, NI
Nikitina, IP
Tregubova, AS
Shcheglov, MP
Bratus, VY
[J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 497 - 500
[10] Fabrication of homostructural ZnO p-n junctions
Ryu, YR
Kim, WJ
White, HW
[J]. JOURNAL OF CRYSTAL GROWTH, 2000, 219 (04) : 419 - 422

← 1 2 →