Void formation in Ge induced by high energy heavy ion irradiation

被引：38

作者：

Huber, H

Assmann, W

Karamian, SA

Mucklich, A

Prusseit, W

Gazis, E

Grotzschel, R

Kokkoris, M

Kossionidis, E

Mieskes, HD

Vlastou, R

机构：

[1] JOINT INST NUCL RES,FLNR,DUBNA 141980,MOSCOW REGION,RUSSIA

[2] FORSCHUNGSZENTRUM ROSSENDORF EV,INST IONENSTRAHLPHYS & MATERIALFORSCH,D-01314 DRESDEN,GERMANY

[3] TECH UNIV MUNICH,PHYS DEPT E10,D-85747 GARCHING,GERMANY

[4] NATL TECH UNIV ATHENS,DEPT PHYS,ATHENS 15780,GREECE

[5] NRCPS DEMOKRITOS,INST NUCL PHYS,ATHENS 15310,GREECE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 122卷 / 03期

关键词：

D O I：

10.1016/S0168-583X(96)00568-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ge wafer irradiated at room temperature with high energetic heavy ions ranging from 165 MeV Ni to 266 MeV Au show a swelling of the bombarded region, The corresponding volume expansion reaches values up to 30% of the irradiated volume, In cross section SEM as well as cross section TEM measurements it is found that the volume expansion is due to a buried porous layer with a sponge-like structure. The dose dependence of the swelling of the germanium samples and the void formation in amorphous Ge will be discussed.

引用

页码：542 / 546

页数：5

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