Synthesis, structure, and optical properties of colloidal GaN quantum dots

被引:142
作者
Micic, OI [1 ]
Ahrenkiel, SP [1 ]
Bertram, D [1 ]
Nozik, AJ [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1063/1.124414
中图分类号
O59 [应用物理学];
学科分类号
摘要
Colloidal chemistry was used to synthesize GaN quantum dots. A GaN precursor, polymeric gallium imide, {Ga(NH)(3/2)}(n), which was prepared by the reaction of dimeric amidogallium with ammonia at room temperature, was heated in trioctylamine at 360 degrees C for one day to produce GaN nanocrystals. The GaN particles were separated, purified, and partially dispersed in a nonpolar solvent to yield transparent colloidal solutions that consisted of individual GaN particles. The GaN nanocrystals have a spherical shape and mean diameter of about 30 +/- 12 Angstrom. The spectroscopic behavior of colloidal transparent dispersion has been investigated and shows that the band gap of the GaN nanocrystals shifts to slightly higher energy due to quantum confinement. The photoluminescence spectrum at 10 K (excited at 310 nm) shows band edge emission with several emission peaks in the range between 3.2 and 3.8 eV, while the photoluminescence excitation spectrum shows two excited-state transitions at higher energies. (C) 1999 American Institute of Physics. [S0003-6951(99)04230-8].
引用
收藏
页码:478 / 480
页数:3
相关论文
共 22 条
[1]   Gallium nitride synthesis using lithium metal as a nitrogen fixant [J].
Barry, ST ;
Ruoff, SA ;
Ruoff, AL .
CHEMISTRY OF MATERIALS, 1998, 10 (09) :2571-2574
[2]   AlGaN nanoparticle/polymer composite: Synthesis, optical, and structural characterization [J].
Benaissa, M ;
Gonsalves, KE ;
Rangarajan, SP .
APPLIED PHYSICS LETTERS, 1997, 71 (25) :3685-3687
[3]   Influence of precursor route on the photoluminescence of bulk nanocrystalline gallium nitride [J].
Coffer, JL ;
Johnson, MA ;
Zhang, LB ;
Wells, RL ;
Janik, JF .
CHEMISTRY OF MATERIALS, 1997, 9 (12) :2671-+
[4]   ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].
DINGLE, R ;
SELL, DD ;
STOKOWSKI, SE ;
ILEGEMS, M .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1211-+
[5]   OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].
GLASER, ER ;
KENNEDY, TA ;
DOVERSPIKE, K ;
ROWLAND, LB ;
GASKILL, DK ;
FREITAS, JA ;
KHAN, MA ;
OLSON, DT ;
KUZNIA, JN ;
WICKENDEN, DK .
PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336
[6]   Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction [J].
Han, WQ ;
Fan, SS ;
Li, QQ ;
Hu, YD .
SCIENCE, 1997, 277 (5330) :1287-1289
[7]   CYCLOTRIGALLAZANE, [H2GANH2]3 - ITS PREPARATION, STRUCTURE, AND CONVERSION TO CUBIC GALLIUM NITRIDE AT 150-DEGREES-C [J].
HWANG, JW ;
HANSON, SA ;
BRITTON, D ;
EVANS, JF ;
JENSEN, KF ;
GLADFELTER, WL .
CHEMISTRY OF MATERIALS, 1990, 2 (04) :342-343
[8]   TOPOCHEMICAL CONTROL IN THE SOLID-STATE CONVERSION OF CYCLOTRIGALLAZANE INTO NANOCRYSTALLINE GALLIUM NITRIDE [J].
HWANG, JW ;
CAMPBELL, JP ;
KOZUBOWSKI, J ;
HANSON, SA ;
EVANS, JF ;
GLADFELTER, WL .
CHEMISTRY OF MATERIALS, 1995, 7 (03) :517-525
[9]   Gallium imide, {Ga(NH)(3/2)}(n), a new polymeric precursor for gallium nitride powders [J].
Janik, JF ;
Wells, RL .
CHEMISTRY OF MATERIALS, 1996, 8 (12) :2708-&
[10]   Electronic energy transfer in CdSe quantum dot solids [J].
Kagan, CR ;
Murray, CB ;
Nirmal, M ;
Bawendi, MG .
PHYSICAL REVIEW LETTERS, 1996, 76 (09) :1517-1520