Enhanced group-V intermixing in InGaAs InP quantum wells studied by cross-sectional scanning tunneling microscopy

被引：37

作者：

Chen, HJ ^{[1
]}

Feenstra, RM

Piva, PG

Goldberg, RD

Mitchell, IV

Aers, GC

Poole, PJ

Charbonneau, S

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.124282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cross-sectional scanning tunneling microscopy is used to study InGaAs/InP quantum-well intermixing produced by phosphorus implantation. When phosphorus ions are implanted in a cap layer in front of the quantum wells (in contrast to earlier work involving implantation through the wells), clear strain development is observed at the interfaces between quantum well and barrier layers after annealing. This is interpreted in terms of enhanced group-V compared to group-III interdiffusion. (C) 1999 American Institute of Physics. [S0003-6951(99)01227-9].

引用

页码：79 / 81

页数：3

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