Symmetry of molecular H2 in Si from a uniaxial stress study of the 3618.4 cm-1 vibrational line

被引：26

作者：

Zhou, JA ^{[1
]}

Stavola, M ^{[1
]}

机构：

[1] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.83.1351

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Uniaxial stress has been used in conjunction with vibrational spectroscopy to probe the structure and microscopic properties of interstitial H-2 in Si. The stress splitting pattern observed for the 3618.4 cm(-1) line assigned to H-2 is consistent with triclinic (C-1) symmetry of a static center. The piezospectroscopic tensor determined in these experiments suggests a near [100] orientation for the H-2 molecular axis. The low symmetry that has been found in these experiments on the 3618.4 cm(-1) line is unexpected.

引用

收藏

页码：1351 / 1354

页数：4

相关论文

共 18 条

[1] HYDROGEN SOLUBILITY IN SILICON AND HYDROGEN DEFECTS PRESENT AFTER QUENCHING [J].

BINNS, MJ ;

MCQUAID, SA ;

NEWMAN, RC ;

LIGHTOWLERS, EC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (10) :1908-1911

[2] HYDROGEN-RELATED DEFECTS IN CRYSTALLINE SEMICONDUCTORS - A THEORISTS PERSPECTIVE [J].

ESTREICHER, SK .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1995, 14 (7-8) :319-412

[3]

HERRING C, 1991, SEMICONDUCT SEMIMET, V34, P225

[4] H-2-ASTERISK DEFECT IN CRYSTALLINE SILICON [J].

HOLBECH, JD ;

NIELSEN, BB ;

JONES, R ;

SITCH, P ;

OBERG, S .

PHYSICAL REVIEW LETTERS, 1993, 71 (06) :875-878

[5] Hydrogen molecules in silicon located at interstitial sites and trapped in voids [J].

Hourahine, B ;

Jones, R ;

Oberg, S ;

Newman, RC ;

Briddon, PR ;

Roduner, E .

PHYSICAL REVIEW B, 1998, 57 (20) :12666-12669

[6]

KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329

[7] SYMMETRY, STRESS ALIGNMENT, AND REORIENTATION KINETICS OF THE SI(AS)-H COMPLEX IN GAAS [J].

KOZUCH, DM ;

STAVOLA, M ;

SPECTOR, SJ ;

PEARTON, SJ ;

LOPATA, J .

PHYSICAL REVIEW B, 1993, 48 (12) :8751-8756

[8] Raman spectroscopy of hydrogen molecules in crystalline silicon [J].

Leitch, AWR ;

Alex, V ;

Weber, J .

PHYSICAL REVIEW LETTERS, 1998, 81 (02) :421-424

[9] ANHARMONIC VIBRATIONS OF HYDROGEN PAIRED WITH SHALLOW IMPURITIES IN SEMICONDUCTORS [J].

NEWMAN, RC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (08) :911-913

[10] Comparative study of vibrational frequencies of H-2 molecules in Si and GaAs [J].

Okamoto, Y ;

Saito, M ;

Oshiyama, A .

PHYSICAL REVIEW B, 1997, 56 (16) :10016-10019