Quantitative secondary ion mass spectrometry analysis of impurities in GaN and AlxGa1-xN films using molecular ions MCs+ and MCs2+

被引：12

作者：

Hongo, C

Tomita, M

Suzuki, M

机构：

[1] Toshiba Corp, Environm Engn Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

[2] Toshiba Corp, Adv Semicond Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 144-45卷

关键词：

secondary ion mass spectroscopy; matrix effect; useful yield; gallium nitride; sputtering; aluminum;

D O I：

10.1016/S0169-4332(98)00815-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In SIMS analysis of GaN and AlxGa1-xN films, MCs+ and MCs2+ ion detection (M is the element to be analyzed) was investigated under Cs+ bombardment. The MCs2+ ions have a larger ion yield than the MCs+ ions when M is one of electronegative ions. Application of these molecular ions to SIMS analysis has made it possible to detect electropositive and electronegative elements in a single analysis run. Further, these molecular ions are useful to minimize the matrix effect in AlxGa1-xN films, with x ranging from 0 to 0.17. The formation mechanism of the MCs+ and MCs2+ ions can also be postulated by comparing the useful yield of these molecular ions and that of single (negative and/or positive) ions. These molecular ions are assumed to be produced mainly by recombination processes in which sputtered neutral species (M and/or MCs) combine with Cs+ ions. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：306 / 309

页数：4

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