Influence of interlayer roughness on magnetoresistive effect of ferromagnetic tunneling junctions

被引：8

作者：

Ando, Y ^{[1
]}

Yokota, M ^{[1
]}

Tezuka, N ^{[1
]}

Miyazaki, T ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 198-99卷

关键词：

TMR; tunnel resistance; surface roughness; exposure;

D O I：

10.1016/S0304-8853(98)01053-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferromagnetic tunneling 80NiFe/Co/Al-oxide/Co junctions with wedge shaped Al-oxide were fabricated. For preparing Al-oxide, pure Al was sputtered without exposure. The tunnel resistance for junctions with sufficiently oxidized Al increased exponentially with increasing d(Al) On the other hand, the tunnel resistance for junctions with an air-leak scattered. The tunneling magnetoresistive effect (TMR) was observed at about 7 Angstrom Al for junctions without exposure. The surface roughness of the sample without exposure was quite small, while that with an air-leak tended to be large with increasing oxidization time and also d(Al). The corresponding tunnel resistance was very small for the junction with the rough interface. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：155 / 157

页数：3

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