Performance improvement of SONOS memory by bandgap engineering of charge-trapping layer

被引：78

作者：

Chen, TS ^{[1
]}

Wu, KH

Chung, H

Kao, CH

机构：

[1] Natl Def Univ, Dept Elect Engn, Chung Cheng Inst Technol, Taoyuan 33501, Taiwan

[2] Natl Def Univ, Chung Cheng Inst Technol, Sch Def Sci, Taoyuan 33501, Taiwan

[3] Natl Def Univ, Chung Cheng Inst Technol, Dept Appl Phys, Taoyuan 33501, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 04期

关键词：

endurance; reliability; retention; silicon-oxide-nitride-oxide-silicon (SONOS);

D O I：

10.1109/LED.2004.825163

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A significant improvement in device performance and reliability characteristics of silicon-oxide-nitride-oxide-silicon (SONOS) Flash memory has been achieved. Superior endurance characteristic shows no sign of degradation even after 10(6), program/erase cycles and an extrapolated ten-year detection window of 1.4 V has been attained from retention measurement. The dramatic improvement results from a bandgap engineering of the SiN charge-trapping layer. With a gradual variation of the SiN ratio from bottom to top of nitride film rather than uniform standard composition, a large number of highly accessible trapping levels are created in addition to the deepened barrier height between nitride and tunnel oxide that reduces back-tunneling probability. The proposed technique shall be valuable in pushing Flash memory technology into the next generation.

引用

页码：205 / 207

页数：3

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