The metal-organic chemical vapor deposition and properties of III-V antimony-based semiconductor materials

This article comprehensively reviews the growth of III-Vantimony-based semiconductor materials using metal-organic chemical vapor deposition (MOCVD). It does this by first discussing the general trends found for the growth of these materials. Next the specific growth techniques are discussed for each of the antimony-based systems including the binaries InSb, GaSb, and AlSb. The growth techniques used for many of the ternaries and quaternaries of these materials are also discussed. Following this a brief description of the use of dopants, novel organometallic sources and superlattices is presented. Next, the use of common characterization techniques is presented for different types of materials. A variety of the types of devices is then presented followed by a short summary and forecast of future directions that are currently being pursued in these materials. (C) 2002 Elsevier Science B.V. All rights reserved.