Effects of p-doping on the thermal sensitivity of individual Si nanowires

被引：5

作者：

Brioude, A. ^{[1
]}

Cornu, D. ^{[1
]}

Miele, P. ^{[1
]}

Mouchet, C. ^{[2
]}

Simonato, J. -P ^{[2
]}

Rouviere, E. ^{[2
]}

机构：

[1] Univ Lyon 1, CNRS, Lab Multimat & Interfaces, UMR 5615, F-69622 Villeurbanne, France

[2] CEA Grenoble DRT LITEN DTNM LCH, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

关键词：

boron; diffusion; elemental semiconductors; gold; heavily doped semiconductors; internal stresses; laser beam effects; nanoparticles; nanowires; phonons; Raman spectra; semiconductor doping; semiconductor quantum wires; silicon; spectral line broadening; spectral line shift;

D O I：

10.1063/1.2968134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A gradual downshift and broadening of the Si optical phonon peak was observed by Raman scattering measurements on individual undoped and p-doped silicon nanowire (SiNW) when heated by a laser beam. This dual effect can be interpreted by an induced compressive stress resulting from structural defects. The p-doped SiNW was shown to be the most sensitive to heating and its structure was clearly modified with a large diffusion of gold atoms forming numerous gold nanoparticles.

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页数：3

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共 21 条

[1] Confined phonons in Si nanowires [J].

Adu, KW ;

Gutiérrez, HR ;

Kim, UJ ;

Sumanasekera, GU ;

Eklund, PC .

NANO LETTERS, 2005, 5 (03) :409-414

[2] A Raman spectroscopy study of individual SiC nanowires [J].

Bechelany, Mikhael ;

Brioude, Arnaud ;

Cornu, David ;

Ferro, Gabriel ;

Miele, Philippe .

ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (06) :939-943

[3] EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES [J].

CERDEIRA, F ;

FJELDLY, TA ;

CARDONA, M .

PHYSICAL REVIEW B, 1973, 8 (10) :4734-4745

[4] EFFECT OF CARRIER CONCENTRATION ON RAMAN FREQUENCIES OF SI AND GE [J].

CERDEIRA, F ;

CARDONA, M .

PHYSICAL REVIEW B, 1972, 5 (04) :1440-&

[5] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].

Cui, Y ;

Lieber, CM .

SCIENCE, 2001, 291 (5505) :851-853

[6] Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species [J].

Cui, Y ;

Wei, QQ ;

Park, HK ;

Lieber, CM .

SCIENCE, 2001, 293 (5533) :1289-1292

[7] Diameter-controlled synthesis of single-crystal silicon nanowires [J].

Cui, Y ;

Lauhon, LJ ;

Gudiksen, MS ;

Wang, JF ;

Lieber, CM .

APPLIED PHYSICS LETTERS, 2001, 78 (15) :2214-2216

[8] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].

Duan, XF ;

Huang, Y ;

Cui, Y ;

Wang, JF ;

Lieber, CM .

NATURE, 2001, 409 (6816) :66-69

[9] Phonon confinement effect of silicon nanowires synthesized by laser ablation [J].

Fukata, N ;

Oshima, T ;

Murakami, K ;

Kizuka, T ;

Tsurui, T ;

Ito, S .

APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3

[10] Direct synthesis of silicon nanowires, silica nanospheres, and wire-like nanosphere agglomerates [J].

Gole, JL ;

Stout, JD ;

Rauch, WL ;

Wang, ZL .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2346-2348