MBE growth of n-type ZnSe and ZnS using ethylchloride as a dopant

被引：7

作者：

Yasuda, T

Zhang, BP

Segawa, Y

机构：

[1] Photodynamics Research Center (PDC), Inst. of Phys. and Chemical Research, Sendai 980, 19-1399 Koeji, Nagamachi, Aoba-ku

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

ZnSe; ZnS; MBE; n-type conductivity; Cl; ethylchloride;

D O I：

10.1016/S0022-0248(97)80024-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new gas source n-type dopant, ethylchloride (EtCl), was used for MBE growth of ZnSe and ZnS. Carrier concentrations up to 3.2 x 10(18) and 3.5 x 10(17) cm(-3) were achieved for ZnSe and ZnS, respectively. The use of the gas source dopant is advantageous in maintaining the MBE chamber.

引用

页码：583 / 586

页数：4

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