Physical properties of bulk single-crystal wafers of gallium nitride

被引：6

作者：

Ivantsov, VA

Sukhoveev, VA

Nikolaev, VI

Nikitina, IP

Dmitriev, VA

机构：

[1] A. F. Ioffe Phys.-Tech. Institute, Russian Academy of Sciences

来源：

PHYSICS OF THE SOLID STATE | 1997年 / 39卷 / 05期

关键词：

D O I：

10.1134/1.1129964

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A study has been performed of the crystalline structure and optical characteristics of single crystals of gallium nitride (GaN). The crystals were grown from a gallium-based flux. X-ray structural analysis showed that the crystals have wurzite structure 2H-GaN. From their luminescence characteristics and optical absorption spectra the crystals are similar to 2H-GaN epitaxial layers described in the literature. (C) 1997 American Institute of Physics.

引用

页码：763 / 765

页数：3

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