Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO) electrodes

被引：14

作者：

Rao, AV ^{[1
]}

Mansour, SA ^{[1
]}

Bement, AL ^{[1
]}

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

来源：

MATERIALS LETTERS | 1996年 / 29卷 / 4-6期

关键词：

ferroelectric lead zirconate titanate; conductive oxide; indium tin oxide; fatigue resistant; leakage current; capacitor;

D O I：

10.1016/S0167-577X(96)00156-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conductive metal oxide contacts were used in the fabrication of fatigue-resistant lead zirconate titanate (PZT) capacitors. The successful fabrication and characterization of PZT thin-film capacitors with transparent conducting indium tin oxide (ITO) contacts using a combination of metallo-organic decomposition (MOD) and rf-sputtering are described. High remnant polarization, improved fatigue resistance, and a leakage current density of 10(-4) A/cm(2) were found in ITO-PZT-ITO capacitors.

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收藏

页码：255 / 258

页数：4

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