Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2

被引：107

作者：

Houssa, M. ^{[1
]}

Pourtois, G. ^{[1
]}

Caymax, M. ^{[1
]}

Meuris, M. ^{[1
]}

Heyns, M. M. ^{[1
,2
]}

Afanas'ev, V. V. ^{[3
]}

Stesmans, A. ^{[3
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Met & Mat Engn, Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Phys & Astron, Semicond Phys Lab, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 16期

关键词：

D O I：

10.1063/1.3006320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic energy band structure of a (100)Ge/GeO(2) interface with a Ge(3)equivalent to Ge(center dot) center (Ge dangling bond) is calculated using the density functional theory. The defect level associated with this dangling bond is found to lie near the middle of the Ge band gap. Consequently, the Ge dangling bond at this interface should be paramagnetic when the Fermi level is near the midgap, and it should thus be observed by electron spin resonance (ESR), which appears to be in contradiction with the results reported by [Afanas'ev , Appl. Phys. Lett. 87, 032107 (2005)]. We point out that the density of Ge(3)equivalent to Ge(center dot) centers at the (100)Ge/GeO(2) interface is possibly at/below the ESR detection limit due to the viscoelastic properties of GeO(2), owing to a better stress relaxation at/near the interface, compared to its silicon counterpart. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006320]

引用

页数：3

共 18 条

[1] Interface traps and dangling-bond defects in (100)Ge/HfO2 -: art. no. 032107 [J].