INTRINSIC SIO2 FILM STRESS MEASUREMENTS ON THERMALLY OXIDIZED SI

[1] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535

[2] Bruckner R., 1970, Journal of Non-Crystalline Solids, V5, P123, DOI 10.1016/0022-3093(70)90190-0

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS [J]. THIN SOLID FILMS, 1984, 122 (03) : 191 - 196

[5] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293

[6] STRESS IN THERMAL SIO2 DURING GROWTH [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10

[7] ROLE OF STRESS ON THE PARABOLIC KINETIC CONSTANT FOR DRY SILICON OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 589 - 591

[8] THE SI-SIO2 INTERFACE - CORRELATION OF ATOMIC-STRUCTURE AND ELECTRICAL-PROPERTIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02): : 574 - 583

[9] Silicon Oxidation Studies: The Role of H2O [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1757 - 1761

[10] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616

[1] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535

[2] Bruckner R., 1970, Journal of Non-Crystalline Solids, V5, P123, DOI 10.1016/0022-3093(70)90190-0

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS [J]. THIN SOLID FILMS, 1984, 122 (03) : 191 - 196

[5] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293

[6] STRESS IN THERMAL SIO2 DURING GROWTH [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10

[7] ROLE OF STRESS ON THE PARABOLIC KINETIC CONSTANT FOR DRY SILICON OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 589 - 591

[8] THE SI-SIO2 INTERFACE - CORRELATION OF ATOMIC-STRUCTURE AND ELECTRICAL-PROPERTIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02): : 574 - 583

[9] Silicon Oxidation Studies: The Role of H2O [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1757 - 1761

[10] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616