INTRINSIC SIO2 FILM STRESS MEASUREMENTS ON THERMALLY OXIDIZED SI

[21] LEWIS EA, UNPUB

[22] LEWIS EA, 1986, 5TH P INT S SIL MAT

[23] EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAM [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (11) : 2011 - &

[24] MAISSEL L, 1973, J APPL PHYS, V44, P534

[25] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - ACCURATE DETERMINATION OF THE KINETIC RATE CONSTANTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1745 - 1753

[26] MASSOUD HZ, 1982, THESIS STANFORD U ST

[27] MOTT NF, 1982, PHILOS MAG A, V45, P323, DOI 10.1080/01418618208244304

[28] SEPARATION OF LINEAR AND PARABOLIC TERMS IN STEAM OXIDATION OF SILICON [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (03) : 198 - &

[29] A SIMPLIFIED VISCOELASTIC MODEL FOR THE THERMAL GROWTH OF THIN SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1909 - 1913

[30] A MEASUREMENT OF THE EFFECT OF INTRINSIC FILM STRESS ON THE OVERALL RATE OF THERMAL-OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2815 - 2816

[21] LEWIS EA, UNPUB

[22] LEWIS EA, 1986, 5TH P INT S SIL MAT

[23] EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAM [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (11) : 2011 - &

[24] MAISSEL L, 1973, J APPL PHYS, V44, P534

[25] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - ACCURATE DETERMINATION OF THE KINETIC RATE CONSTANTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1745 - 1753

[26] MASSOUD HZ, 1982, THESIS STANFORD U ST

[27] MOTT NF, 1982, PHILOS MAG A, V45, P323, DOI 10.1080/01418618208244304

[28] SEPARATION OF LINEAR AND PARABOLIC TERMS IN STEAM OXIDATION OF SILICON [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (03) : 198 - &

[29] A SIMPLIFIED VISCOELASTIC MODEL FOR THE THERMAL GROWTH OF THIN SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1909 - 1913

[30] A MEASUREMENT OF THE EFFECT OF INTRINSIC FILM STRESS ON THE OVERALL RATE OF THERMAL-OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2815 - 2816