INTRINSIC SIO2 FILM STRESS MEASUREMENTS ON THERMALLY OXIDIZED SI

被引：113

作者：

KOBEDA, E

IRENE, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 01期

关键词：

D O I：

10.1116/1.583853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：15 / 19

页数：5

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