TEMPERATURE-DEPENDENCE OF THE INTERNAL MECHANICAL STRESSES IN THE SI-SIO2 SYSTEM

[1] Bland D.R., 1960, INT SERIES MONOGRAPH

[2] HIGH TEMPERATURE CAMERA FOR X-RAY TOPOGRAPHY [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (05) : 638 - &

[3] Campbell DS, 1970, HDB THIN FILM TECHNO

[4] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293

[5] Hoffman R. W., 1966, PHYS THIN FILMS, VVol. 3, pp. 211

[6] HOFFMAN RW, 1976, NATO ADV STUDY I S B, V14

[7] INSITU DEFORMATION MEASUREMENT ON THE SURFACE OF SILICON-WAFERS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1982, 15 (07): : 746 - 748

[8] JAROSZ M, UNPUB

[9] KERN W, 1976, RCA REV, V37, P4

[10] KIRKOTHMER, 1969, ENCY CHEM TECHNOLOGY, V18, P114

[1] Bland D.R., 1960, INT SERIES MONOGRAPH

[2] HIGH TEMPERATURE CAMERA FOR X-RAY TOPOGRAPHY [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (05) : 638 - &

[3] Campbell DS, 1970, HDB THIN FILM TECHNO

[4] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293

[5] Hoffman R. W., 1966, PHYS THIN FILMS, VVol. 3, pp. 211

[6] HOFFMAN RW, 1976, NATO ADV STUDY I S B, V14

[7] INSITU DEFORMATION MEASUREMENT ON THE SURFACE OF SILICON-WAFERS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1982, 15 (07): : 746 - 748

[8] JAROSZ M, UNPUB

[9] KERN W, 1976, RCA REV, V37, P4

[10] KIRKOTHMER, 1969, ENCY CHEM TECHNOLOGY, V18, P114