SILICON OXIDATION STUDIES - SILICON ORIENTATION EFFECTS ON THERMAL-OXIDATION

被引：80

作者：

IRENE, EA

MASSOUD, HZ

TIERNEY, E

机构：

[1] DUKE UNIV,DEPT ELECT ENGN,DURHAM,NC 27706

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 06期

关键词：

D O I：

10.1149/1.2108829

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1253 / 1256

页数：4

共 16 条

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[6] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES
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[7] SILICON OXIDATION STUDIES - A REVISED MODEL FOR THERMAL-OXIDATION
IRENE, EA
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5416 - 5420
[8] EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAM
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[9] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - ACCURATE DETERMINATION OF THE KINETIC RATE CONSTANTS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1745 - 1753
[10] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .2. PHYSICAL-MECHANISMS
MASSOUD, HZ
PLUMMER, JD
IRENE, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2693 - 2700

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