A MEASUREMENT OF INTRINSIC SIO2 FILM STRESS RESULTING FROM LOW-TEMPERATURE THERMAL-OXIDATION OF SI

被引：115

作者：

KOBEDA, E

IRENE, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.583603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：720 / 722

页数：3

相关论文

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