A MEASUREMENT OF THE EFFECT OF INTRINSIC FILM STRESS ON THE OVERALL RATE OF THERMAL-OXIDATION OF SILICON

被引：31

作者：

SRIVASTAVA, JK

IRENE, EA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期

关键词：

D O I：

10.1149/1.2113676

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：2815 / 2816

页数：2

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