ROLE OF STRESS ON THE PARABOLIC KINETIC CONSTANT FOR DRY SILICON OXIDATION

[1] Bruckner R., 1970, Journal of Non-Crystalline Solids, V5, P123, DOI 10.1016/0022-3093(70)90190-0

[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[3] ERNISSE EP, 1979, APPL PHYS LETT, V35, P8

[4] DRY OXIDATION OF SILICON - A NEW MODEL OF GROWTH INCLUDING RELAXATION OF STRESS BY VISCOUS-FLOW [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7153 - 7158

[5] A REVISED ANALYSIS OF DRY OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2878 - 2880

[6] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1216 - 1222

[7] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616

[8] SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) : 1380 - 1384

[9] SILICON OXIDATION STUDIES - A REVISED MODEL FOR THERMAL-OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5416 - 5420

[10] SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1146 - 1151

[1] Bruckner R., 1970, Journal of Non-Crystalline Solids, V5, P123, DOI 10.1016/0022-3093(70)90190-0

[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[3] ERNISSE EP, 1979, APPL PHYS LETT, V35, P8

[4] DRY OXIDATION OF SILICON - A NEW MODEL OF GROWTH INCLUDING RELAXATION OF STRESS BY VISCOUS-FLOW [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7153 - 7158

[5] A REVISED ANALYSIS OF DRY OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2878 - 2880

[6] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1216 - 1222

[7] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616

[8] SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) : 1380 - 1384

[9] SILICON OXIDATION STUDIES - A REVISED MODEL FOR THERMAL-OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5416 - 5420

[10] SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1146 - 1151