Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal-ferroelectric-metal-insulator-semiconductor structure

被引：20

作者：

Ashikaga, K ^{[1
]}

Ito, T ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, Semicond Technol Labs, Hachioji, Tokyo 1930834, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 10期

关键词：

D O I：

10.1063/1.369381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Memory retention characteristics of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) field effect transistors (FETs) were investigated in detail using a simple structure, referred to as quasi-MFMIS, in which one electrode of the metal-ferroelectric-metal (MFM) capacitor is connected to a gate electrode of a conventional metal-oxide-semiconductors (MOS) FET using an external interconnection cable. It was found that the memory window of the MFMIS FET was quickly lost (after about 1000 s) and from a comparison with simulations, this was attributed mainly to a decrease in ferroelectric polarization due to a depolarization field inevitably remaining in the ferroelectric film during memory retention. (C) 1999 American Institute of Physics. [S0021-8979(99)01210-4].

引用

页码：7471 / 7476

页数：6

共 9 条

[1] PHASE-TRANSITION, STABILITY, AND DEPOLARIZATION FIELD IN FERROELECTRIC THIN-FILMS [J].

BATRA, IP ;

WURFEL, P ;

SILVERMAN, BD .

PHYSICAL REVIEW B, 1973, 8 (07) :3257-3265

[2] Non-volatile FCG (ferroelectric-capacitor and transistor-gate connection) memory cell with non-destructive read-out operation [J].

Katoh, Y ;

Fujieda, S ;

Hayashi, Y ;

Kunio, T .

1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1996, :56-57

[3] Effect of annealing method to crystalize on Sr0.9Bi2.3Ta2O9+α thin film properties formed from alkoxide solution [J].

Koiwa, I ;

Tani, K ;

Mita, J ;

Iwabuchi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (01) :192-197

[4] DEVICE MODELING OF FERROELECTRIC CAPACITORS [J].

MILLER, SL ;

NASBY, RD ;

SCHWANK, JR ;

RODGERS, MS ;

DRESSENDORFER, PV .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) :6463-6471

[5] STUDY ON FERROELECTRIC THIN-FILMS FOR APPLICATION TO NDRO NONVOLATILE MEMORIES [J].

NAKAO, Y ;

NAKAMURA, T ;

KAMISAWA, A ;

TAKASU, H .

INTEGRATED FERROELECTRICS, 1995, 6 (1-4) :23-34

[6] QUANTITATIVE MEASUREMENT OF SPACE-CHARGE EFFECTS IN LEAD ZIRCONATE-TITANATE MEMORIES [J].

SCOTT, JF ;

ARAUJO, CA ;

MELNICK, BM ;

MCMILLAN, LD ;

ZULEEG, R .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :382-388

[7] Electrical properties of ferroelectric-capacitor-gate Si MOS transistors using P(L)ZT films [J].

Tokumitsu, E ;

Shimamura, T ;

Ishiwara, H .

INTEGRATED FERROELECTRICS, 1997, 15 (1-4) :137-144

[8] Thermodynamic stability of the spontaneous polarization and the space charge layer in ferroelectric/semiconductor heterostructures [J].

Watanabe, Y ;

Sawamura, D .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B) :6162-6166

[9] Memory retention and switching speed of ferroelectric field effect in (Pb,La)(Ti,Zr)O-3/La2CuO4:Sr heterostructure [J].

Watanabe, Y ;

Tanamura, M ;

Matsumoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1564-1568

← 1 →