Distinguishing between dipoles and field effects in molecular gated transistors

被引：22

作者：

Shaya, O. ^{[1
]}

Shaked, M. ^{[1
]}

Doron, A. ^{[2
]}

Cohen, A. ^{[2
]}

Levy, I. ^{[2
]}

Rosenwaks, Y. ^{[1
]}

机构：

[1] Tel Aviv Univ, Fac Engn, Dept Phys Elect, IL-69978 Tel Aviv, Israel

[2] Intel Elect, Intel Res Israel Lab, IL-91031 Jerusalem, Israel

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期

关键词：

D O I：

10.1063/1.2958343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We combine Kelvin probe force microscopy and current-voltage measurements in order to characterize silicon-on-insulator bioFETs. The measurements were conducted on monolayer of (3-aminopropyl)-trimethoxysilane, which was deposited on ozone activated silicon oxide surface covering the transistor channel. The work function of the modified surface decreased by more than 2 eV, and the threshold voltage measured on the same devices showed a very large increase (similar to 10 V) following the chemical modification. A detailed analysis enables us to distinguish between electron affinity and field effects in such devices, and in molecular gated transistors in general. (c) 2008 American Institute of Physics.

引用

页数：3

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