Molecular control over semiconductor surface electronic properties: Dicarboxylic acids on CdTe, CdSe, GaAs, and InP

被引:173
作者
Cohen, R
Kronik, L
Shanzer, A
Cahen, D [1 ]
Liu, A
Rosenwaks, Y
Lorenz, JK
Ellis, AB
机构
[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel
[2] Weizmann Inst Sci, Dept Organ Chem, IL-76100 Rehovot, Israel
[3] Tel Aviv Univ, Dept Phys Elect, IL-69978 Ramat Aviv, Israel
[4] Univ Wisconsin, Dept Chem, Madison, WI 53706 USA
关键词
D O I
10.1021/ja9906150
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present "design rules" for the selection of molecules to achieve electronic control over semiconductor surfaces, using a simple molecular orbital model. The performance of most electronic devices depends critically on their surface electronic properties, i.e., surface band-bending and surface recombination velocity. For semiconductors, these properties depend on the density and energy distribution of surface states. The model is based on a surface state-molecule, HOMO-LUMO-Like interaction between molecule and semiconductor. We test it by using a combination of contact potential difference, surface photovoltage spectroscopy, and time- and intensity-resolved photoluminescence measurements. With these, we characterize the interaction of two types of bifunctional dicarboxylic acids, the frontier orbital energy levels of which can be changed systematically, with air-exposed CdTe, CdSe, InP, and GaAs surfaces. The molecules are chemisorbed as monolayers onto the semiconductors. This model explains the widely varying electronic consequences of such interaction and shows them to be determined by the surface state energy position and the strength of the molecule-surface state coupling. The present findings can thus be used as guidelines for molecule-aided surface engineering of semiconductors.
引用
收藏
页码:10545 / 10553
页数:9
相关论文
共 49 条
  • [1] Quantitative assessment of the photosaturation technique
    Aphek, OB
    Kronik, L
    Leibovitch, M
    Shapira, Y
    [J]. SURFACE SCIENCE, 1998, 409 (03) : 485 - 500
  • [2] ELECTRONIC PASSIVATION OF GAAS-SURFACES BY ELECTRODEPOSITION OF ORGANIC-MOLECULES CONTAINING REACTIVE SULFUR
    ASAI, K
    MIYASHITA, T
    ISHIGURE, K
    FUKATSU, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1582 - 1586
  • [3] Controlling the work function of GaAs by chemisorption of benzoic acid derivatives
    Bastide, S
    Butruille, R
    Cahen, D
    Dutta, A
    Libman, J
    Shanzer, A
    Sun, LM
    Vilan, A
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 1997, 101 (14): : 2678 - 2684
  • [4] BASTIDE S, UNPUB
  • [5] Bose D. N., 1984, Materials Letters, V2, P455, DOI 10.1016/0167-577X(84)90162-9
  • [6] Brillson L.J., 1993, CONTACTS SEMICONDUCT
  • [7] CONTROLLING THE WORK FUNCTION OF CDSE BY CHEMISORPTION OF BENZOIC-ACID DERIVATIVES AND CHEMICAL ETCHING
    BRUENING, M
    MOONS, E
    CAHEN, D
    SHANZER, A
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1995, 99 (20) : 8368 - 8373
  • [8] POLAR LIGAND ADSORPTION CONTROLS SEMICONDUCTOR SURFACE-POTENTIALS
    BRUENING, M
    MOONS, E
    YARONMARCOVICH, D
    CAHEN, D
    LIBMAN, J
    SHANZER, A
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1994, 116 (07) : 2972 - 2977
  • [9] CHARACTERIZATION OF INTERFACE STATES AT III-V COMPOUND SEMICONDUCTOR-METAL INTERFACES
    BURSTEIN, L
    BREGMAN, J
    SHAPIRA, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2312 - 2316
  • [10] DEFECT CHEMICAL EXPLANATION FOR THE EFFECT OF AIR ANNEAL ON CDS/CULNSE2 SOLAR-CELL PERFORMANCE
    CAHEN, D
    NOUFI, R
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (06) : 558 - 560