Molecular control over semiconductor surface electronic properties: Dicarboxylic acids on CdTe, CdSe, GaAs, and InP

被引:173
作者
Cohen, R
Kronik, L
Shanzer, A
Cahen, D [1 ]
Liu, A
Rosenwaks, Y
Lorenz, JK
Ellis, AB
机构
[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel
[2] Weizmann Inst Sci, Dept Organ Chem, IL-76100 Rehovot, Israel
[3] Tel Aviv Univ, Dept Phys Elect, IL-69978 Ramat Aviv, Israel
[4] Univ Wisconsin, Dept Chem, Madison, WI 53706 USA
关键词
D O I
10.1021/ja9906150
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present "design rules" for the selection of molecules to achieve electronic control over semiconductor surfaces, using a simple molecular orbital model. The performance of most electronic devices depends critically on their surface electronic properties, i.e., surface band-bending and surface recombination velocity. For semiconductors, these properties depend on the density and energy distribution of surface states. The model is based on a surface state-molecule, HOMO-LUMO-Like interaction between molecule and semiconductor. We test it by using a combination of contact potential difference, surface photovoltage spectroscopy, and time- and intensity-resolved photoluminescence measurements. With these, we characterize the interaction of two types of bifunctional dicarboxylic acids, the frontier orbital energy levels of which can be changed systematically, with air-exposed CdTe, CdSe, InP, and GaAs surfaces. The molecules are chemisorbed as monolayers onto the semiconductors. This model explains the widely varying electronic consequences of such interaction and shows them to be determined by the surface state energy position and the strength of the molecule-surface state coupling. The present findings can thus be used as guidelines for molecule-aided surface engineering of semiconductors.
引用
收藏
页码:10545 / 10553
页数:9
相关论文
共 49 条
  • [31] CHEMICAL STUDIES OF THE PASSIVATION OF GAAS SURFACE RECOMBINATION USING SULFIDES AND THIOLS
    LUNT, SR
    RYBA, GN
    SANTANGELO, PG
    LEWIS, NS
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (12) : 7449 - 7465
  • [32] Luth H, 1998, SURFACES INTERFACES
  • [33] Post-growth, In doping of CdTe single crystals via vapor phase
    Lyahovitskaya, V
    Kaplan, L
    Goswami, J
    Cahen, D
    [J]. JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) : 106 - 112
  • [34] MANY A, 1965, SEMICONDUCTOR SURFAC
  • [35] PHOTOLUMINESCENCE-BASED CORRELATION OF SEMICONDUCTOR ELECTRIC-FIELD THICKNESS WITH ADSORBATE HAMMETT SUBSTITUENT CONSTANTS - ADSORPTION OF ANILINE DERIVATIVES ONTO CADMIUM SELENIDE
    MURPHY, CJ
    LISENSKY, GC
    LEUNG, LK
    KOWACH, GR
    ELLIS, AB
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1990, 112 (23) : 8344 - 8348
  • [36] CHEMISTRY AND ELECTRONIC-STRUCTURE OF THE H-2 PLASMA PASSIVATED SURFACE OF CDTE
    NELSON, AJ
    FRIGO, SP
    ROSENBERG, RA
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) : 1632 - 1637
  • [37] REDUCTION OF GAAS SURFACE RECOMBINATION VELOCITY BY CHEMICAL TREATMENT
    NELSON, RJ
    WILLIAMS, JS
    LEAMY, HJ
    MILLER, B
    CASEY, HC
    PARKINSON, BA
    HELLER, A
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 76 - 79
  • [38] PHOTOLUMINESCENCE AS A PROBE OF THE ADSORPTION OF GASEOUS BORANES ONTO THE SURFACE OF CADMIUM SELENIDE CRYSTALS
    NEU, DR
    OLSON, JA
    ELLIS, AB
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (21) : 5713 - 5716
  • [39] PICOSECOND TIME-RESOLVED LUMINESCENCE STUDIES OF SURFACE AND BULK RECOMBINATION PROCESSES IN INP
    ROSENWAKS, Y
    SHAPIRA, Y
    HUPPERT, D
    [J]. PHYSICAL REVIEW B, 1992, 45 (16): : 9108 - 9119
  • [40] RECOMBINATION DYNAMICS AT INP LIQUID INTERFACES
    ROSENWAKS, Y
    THACKER, BR
    NOZIK, AJ
    SHAPIRA, Y
    HUPPERT, D
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (40) : 10421 - 10429