Mercuric iodide polycrystalline films

被引：36

作者：

Iwanczyk, JS ^{[1
]}

Patt, BE ^{[1
]}

Tull, CR ^{[1
]}

MacDonald, LR ^{[1
]}

Skinner, N ^{[1
]}

Hoffman, EJ ^{[1
]}

Fornaro, L ^{[1
]}

Mussio, L ^{[1
]}

Saucedo, E ^{[1
]}

Gancharov, A ^{[1
]}

机构：

[1] Photon Imaging Inc, Northridge, CA 91324 USA

来源：

PENETRATING RADIATION SYSTEMS AND APPLICATIONS III | 2001年 / 4508卷

关键词：

mercuric iodide; polycrystalline; detector; x-ray; x-ray film; digital x-ra; direct x-ray; direct digital;

D O I：

10.1117/12.450793

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Mercuric iodide (HgI2) polycrystalline films are being developed as a new detector technology for digital x-ray imaging. Films have been grown with areas up to 80 cm(2) (4" diameter) and thickness of 20-250 mum using sublimation. The growth techniques used can be easily extended to produce much larger film areas (>10"x10"). Thickness of the grown layers and size of the grains can be regulated over a wide range by adjusting the growth parameters. The films were characterized with respect to their electrical properties and in response to ionizing radiation. Lzakage current as low as 40 pA/cm(2) at the operating bias voltage of similar to50 V has been observed. High sensitivity and excellent linearity in the response to x-rays was measured. Signals from these HgI2 polycrystalline detectors, in response to ionizing radiation, compare favorably to the best published results for all high Z polycrystalline films grown elsewhere, including TlBr, PbI2 and HgI2. The low dark current, good sensitivity, and linearity of the response to x-rays put HgI2 polycrystalline semiconductor detectors in position as a leading candidate material for use in digital x-ray imaging systems. Our future efforts will concentrate on optimization of film growth techniques specifically for deposition on a-Si:H flat panel readout arrays.

引用

页码：28 / 40

页数：13

共 25 条

[1] A large-area, 97 μm pitch, indirect-detection, active matrix, flat-panel imager (AMFPI) [J].