Direct patterning of spin-on glass with 157 nm lithography: Application to nanoscale crystal growth

被引：8

作者：

Bloomstein, TM ^{[1
]}

Juodawlkis, PW ^{[1
]}

Swint, RB ^{[1
]}

Cann, SG ^{[1
]}

Deneault, SJ ^{[1
]}

Efremow, NN ^{[1
]}

Hardy, DE ^{[1
]}

Marchant, MF ^{[1
]}

Napoleone, A ^{[1
]}

Oakley, DC ^{[1
]}

Rothschild, M ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 06期

关键词：

D O I：

10.1116/1.2101692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selective area homoepitaxial growth of InP in 50 nm scale dense features has been demonstrated using hydrogen silsesquioxane (HSQ) as the growth mask. The HSQ growth mask was patterned lithographically using high resolution interference lithography at 157 nm. Lithographic process conditions were optimized, including postapplication bake temperature, developer normality, and oxygen levels during exposure. (c) 2005 American Vacuum Society.

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页码：2617 / 2623

页数：7

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