Improved step and flash imprint lithography templates for nanofabrication

被引:25
作者
Resnick, DJ [1 ]
Mancini, D
Dauksher, WJ
Nordquist, K
Bailey, TC
Johnson, S
Sreenivasan, SV
Ekerdt, JG
Willson, CG
机构
[1] Motorola Labs, Phys Sci Res Labs, Tempe, AZ 85284 USA
[2] Univ Texas, Texas Mat Inst, Austin, TX 78712 USA
关键词
step; flash; imprint; lithography;
D O I
10.1016/S0167-9317(03)00329-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Step and flash imprint lithography (SFIL) is an attractive method for printing sub-100 nm geometries. Relative to other imprinting processes, SFIL has the advantage that the template is transparent, thereby facilitating conventional overlay techniques. In addition, the imprint process is performed at low pressures and room temperature, which minimizes magnification and distortion errors. Several different methods for fabricating templates are presented in this study. One scheme addresses some of the weaknesses associated with a solid glass substrate by incorporating a conductive and transparent layer of indium tin oxide (ITO) on the surface of the substrate. Features are defined on the templates by patterning a thin layer of PECVD oxide that is deposited on the ITO layer. A second method bypasses the oxide etch process by imaging a thin layer of hydrogen silsesquioxane (HSQ). By using a combination of these two methods, it is also possible to form multi-tiered structures on a template. Templates with features as small as 20 nm have been fabricated using the methods described above. The templates were then used to imprint patterns on 200 mm silicon wafers. It appears that any feature defined in the template is faithfully replicated on the wafer. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:412 / 419
页数:8
相关论文
共 14 条
[1]   Process optimization of a chemically amplified negative resist for electron beam exposure and mask making applications [J].
Ainley, E ;
Nordquist, K ;
Resnick, DJ ;
Carr, DW ;
Tiberio, RC .
MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) :375-378
[2]   Step and flash imprint lithography: Template surface treatment and defect analysis [J].
Bailey, T ;
Choi, BJ ;
Colburn, M ;
Meissl, M ;
Shaya, S ;
Ekerdt, JG ;
Sreenivasan, SV ;
Willson, CG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3572-3577
[3]   Design of orientation stages for step and flash imprint lithography [J].
Choi, BJ ;
Sreenivasan, SV ;
Johnson, S ;
Colburn, M ;
Wilson, CG .
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY, 2001, 25 (03) :192-199
[4]   Step and flash imprint lithography: A new approach to high-resolution patterning [J].
Colburn, M ;
Johnson, S ;
Stewart, M ;
Damle, S ;
Bailey, T ;
Choi, B ;
Wedlake, M ;
Michaelson, T ;
Sreenivasan, SV ;
Ekerdt, J ;
Willson, CG .
EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 :379-389
[5]  
Colburn M., 2001, SOLID STATE TECHNOL, V67
[6]   Plasma etching of Cr: A multiparameter uniformity study utilizing patterns of various Cr loads [J].
Constantine, C ;
Westerman, RJ ;
Plumhoff, J .
PHOTOMASK AND X-RAY MASK TECHNOLOGY VI, 1999, 3748 :153-157
[7]   Characterization of and imprint results using indium tin oxide-based step and flash imprint lithography templates [J].
Dauksher, WJ ;
Nordquist, KJ ;
Mancini, DP ;
Resnick, DJ ;
Baker, JH ;
Hooper, AE ;
Talin, AA ;
Bailey, TC ;
Lemonds, AM ;
Sreenivasan, SV ;
Ekerdt, JG ;
Willson, CG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06) :2857-2861
[8]   Fabrication of T gate structures by nanoimprint lithography [J].
Macintyre, DS ;
Chen, Y ;
Lim, D ;
Thoms, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2797-2800
[9]   Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates [J].
Mancini, DP ;
Gehoski, KA ;
Ainley, E ;
Nordquist, KJ ;
Resnick, DJ ;
Bailey, TC ;
Sreenivasan, SV ;
Ekerdt, JG ;
Willson, CG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06) :2896-2901
[10]   Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations [J].
Namatsu, H ;
Takahashi, Y ;
Yamazaki, K ;
Yamaguchi, T ;
Nagase, M ;
Kurihara, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01) :69-76